主讲人：Professor CHUA HOCK CHUAN DANIEL

主持人：孙卓开始时间：2020.1.7日下午13:30

讲座地址：闵行物理楼报告厅226

主办单位：纳光电教育部工程中心

报告人简介：Dr CHUA HOCK CHUAN DANIEL is a full Professor of Department of Materials Science & Engineering at Nantional University of Singapore. He received his B.Sc (Hon) from NUS and PhD from University of Cambridge. He is the pioneer in Filtered Catholic Vacuum Arc (FCVA) technology and works over the years in 2D materials especially in graphene, transition metal dichalcogenides, nanocomposites and carbon nanotubes. Besides this, his current research is also including growth and application of 2D materials and their heterostructures, fabrication and characterization of nanostructurred metal oxide for sensing and optoelectronic applications, thermal characterization techniques and waste heat recovery materials. To date, Dr Daniel has published more than 300 international journal papers. Prior to this, he worked in the semiconductor and harddisk industry for 3 years. His area of interest focus on designing nanostructured materials with applications in electronics and clean energy generation.

报告摘要：2D carbon and transition metal dichalcogenides (TMD) materials have attracted much attention due to their unique properties, ranging from low dimensional effects, good structural integrity, high electrical and thermal conductivity, and chemical stability. Increasingly, the applications of these materials have gradually progressed into different areas ranging from electronics to conductive coatings to biomedical technology. In this talk, we will show through rational design, we can engineer these low dimensional materials through different growth techniques and obtained the required structure and morphology thus achieving the desired results, for example as better electron emitters using low temperature growth of graphene directly on nanospindt tips. Through a combination of bottoms-up and top-down approach, we are able to engineer various 2D compounds into core-shell and other type of hybrid structures, A few examples such as high mobility plate-like structures of MoO3 and memory effects of 2D CuS will be shown.