商丽燕

研究方向：半导体低维体系的自旋特性和输运特性

研究对象：HgCdTe MIS结构、HgCdTe/CdTe量子阱、InGaAs/InAlAs高迁移率晶体管、GaN/AlGaN异质结等二维电子气体系

研究方法和手段：磁输运特性测试、I-V和C-V特性测试、半导体材料的基本工艺处理等方法

主持项目：

1.国家自然科学基金(项目号：61306119，2014.01-2016.12)

2.上海市自然科学基金(项目号：13ZR1453700，2013.10-2016.09) 

1. L. Y. Shang, T. Lin, W. Z. Zhou, L. M. Wei, Y. F. Wei, Y. H. Sun, S. L. Guo, P. X. Yang, J. H. Chu, Spin-related magnetoresistance oscillations in the inversion layer on bulk p-HgCdTe, Journal of Applied Physics 109， 113717 (2011)；Virtual Journal of Nanoscale Science and Technology June 20 (2011).

2. Liyan Shang, Guolin Yu, Tie Lin, Wenzheng Zhou, Shaoling Guo, Ning Dai, Junhao Chu , Spin splitting in InGaAs/InP heterostructures, Chinese Physics Letters 25, 2194 (2008)

3. Liyan Shang, Jiapeng Shui, Bin Cai, and Cui Ping, Reconsideration of anelastic relaxation peaks in pure aluminium, Chinese Physics Letters 22, 2338 (2005)

4. B. Cai, L. Y. Shang, P. Cui, and J. Eckert, Mechanism of internal friction in bulk ZrCuNiAl metallic galss, Phys. Rev. B 70, 184208 (2004)

5. Y. M. Zhou, L. Y. Shang, G. Yu, K. H. Gao, W. Z. Zhou, T. Lin, S. L. Guo, J. H. Chu, N. Dai, and D. G. Austing, Transport properties of a spin-split two-dimensional electron gas in an InGaAs/InP quantum well structure, Journal of Applied Physics 106, 073722 (2009)

6. 商丽燕、林铁、周文政、黄志明、李东临、高宏玲、崔利杰、曾一平、郭少令、褚君浩，InGaAs/InAlAs量子阱中双子带占据的二维电子气的输运特性，物理学报 57，2481 (2008)

7. 商丽燕、林铁、周文政、李东临、高宏玲、崔利杰、曾一平、郭少令、褚君浩，两个子带占据的InGaAs/InAlAs量子阱中填充因子的变化规律，物理学报 57，3818 (2008)

8. 商丽燕、林铁、周文政、李东临、高宏玲、曾一平、郭少令、俞国林、褚君浩，InGaAs/InAlAs量子阱中的正磁阻效应，物理学报 57，5232 (2008)

9. W. Z. Zhou, T. Lin, L. Y. Shang, G. Yu, K. H. Gao, Y. M. Zhou, L. M. Wei, L. J. Cui, Y. P. Zeng, S. L. Guo, and J. H. Chu, Anomalous shift of the beating nodes in illumination-controlled InGaAs/InAlAs two-dimensional electron gases with strong spin-orbit interaction, Physical Review B 81, 195312 (2010)

10. W. Z. Zhou, T. Lin, L. Y. Shang, L. Sun, K. H. Gao, Y. M. Zhou, G. Yu, N. Tang, K. Han, B. Shen, S. L. Guo, Y. S. Gui, and J. H. Chu, Influence of the illumination on weak antilocalization in an AlxGa1-xN/GaN heterostructure with strong spin-orbit coupling, Appl. Phys. Lett. 93, 262104 (2008)

11. W. Z. Zhou, T. Lin, L. Y. Shang, L. Sun, K. H. Gao, Y. M. Zhou, G. Yu, N. Tang, K. Han, B. Shen, S. L. Guo, Y. S. Gui, and J. H. Chu, Weak antilocalization and beating pattern in high electron mobility AlxGa1-xN/GaN two-dimensional electron gas with strong Rashba spin-orbit coupling, J. Appl. Phys. 104, 053703 (2008)

12.W. Z. Zhou, T. Lin, L. Y. Shang, Z. M. Huang, G. Yu, S. L. Guo, Y. S. Gui, N. Dai, J. H. Chu, L. J. Cui, D. L. Li , H. L. Gao, and Y. P. Zeng, Weak anti-localization and Beating pattern in an InGaAs/InAlAs quantum well, Solid State Communications 143, 300 (2007)