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钟妮

研究员 博导

6165cc金沙总站检测中心      

导航

  • 个人资料
  • 研究方向
  • 招生与培养
  • 开授课程
  • 科研项目
  • 学术成果
  • 荣誉及奖励

个人资料

  • 部门： 6165cc金沙总站检测中心
  • 毕业院校： 日本奈良科学技术大学
  • 学位： 博士
  • 学历： 博士
  • 邮编： 200241
  • 联系电话： 021-54836052
  • 传真：
  • 电子邮箱： nzhong@ee.ecnu.edu.cn
  • 办公地址： 上海市闵行区东川路500号 信息楼545
  • 通讯地址： 上海市闵行区东川路500号 6165cc金沙总站检测中心

教育经历

2004.9-2007.9， 博士，     日本国立奈良先端科学技术大学院大学 

                日本国费奖学金，中国国家优秀自费留学生奖

  

2000.9-2003.7， 硕士，     中国科学院上海硅酸盐研究所



工作经历


2012.03      至今， 副研究员/研究员,   金沙

2008.04 - 2012.03,  特别研究员,        日本产业技术综合研究所



个人简介

长期从事铁电氧化物的研究工作。2003年获中国科学院上海硅酸盐研究所硕士学位，2007年获日本奈良先端科学技术大学院大学博士学位，师从日本著名铁电物理学家塩崎忠（Shiosaki Tadashi）。近年的研究方向主要集中在氧化物薄膜和低维铁电器件的制备、电学及多功能探针显微镜表征方面。目前为止，在 Nature Commu., Adv. Funct. Mater., Appl. Phys. Lett., IEEE Electr. Device L.等国际学术刊物上发表论文六十余篇。曾获日本文部科学省博士研究生奖学金以及2006 年国家优秀自费留学生奖学金。


社会兼职


     

           


研究方向

新型微纳电子器件

点击查看原图


扫描探针显微镜



利用一套功能强大的扫描探针显微镜实现对材料的新颖物理特性

包括微观铁电性、磁性及输运特性的实时表征


组内最新研究进展

2023年12月 祝贺魏鹿奇同学在“第十九届电介质物理、材料与应用学术会议”暨“第二十一届全国电子元件与材料学术大会”中获得优秀海报奖。

2022年6月“Mechanical Polarization Switching in Hf0.5Zr0.5O2 Thin Film” Nano Letters  (2022) https://doi.org/10.1021/acs.nanolett.2c01066  祝贺组内最新工作发表在纳米领域权威期刊

2022年2月“Nanoscale mapping of Cu-ion transport in van der Waals layered CuCrP2S6”Advanced  Materials Interfaces 9, 2101769, (2022) 

2022年1月“Electric-Field-Induced Room Temperature Antiferroelectric-Ferroelectric Phase Transition In Van Der Waals Layered GeSe”ACS Nano 16, 1308(2022) 

2021, 21017692021, 21017692021年11月“Strain-engineering on GeSe: Raman spectroscopy study”Physical Chemistry Chemical Physics 23, 26997(2021)

2021年3月“A Flexible Mott Synaptic Transistor for Nociceptor Simulation and Neuromorphic Computing”Advanced Functional Materials 2101099, 31 (2021) 

2021年2月“Ion adsorption-induced reversible polarization switching of a van der Waals layered ferroelectric” Nature Communication 655, 12 (2021) 

2021年2月“Strain-controlled electrical and magnetic properties of SrRuO3 thin films with Sr3Al2O6 buffer layers”Applied Physics Letters 072407, 118 (2021)

  

招生与培养

开授课程

专业英语  Discipline English

微电子工艺 Microelectronic Processing

科研项目

主持及参与项目

7）  国家自然科学基金重点项目 2022年-2026年     参与

     二元VI族铁谷体铁性的起源、耦合及多场调控研究

  

6） 国家自然科学基金面上项目 2021年-2024年

    铁电薄膜的畴结构演化及其对突触可塑性的调控研究  主持


5） 上海市自然科学基金 2020年-2023年

    基于BaTiO3的新型铁电神经器件的畴动力学研究  主持


4)  国家自然科学基金青年项目 2014年-2016年

    BiFeO3外延薄膜受铁电极化调控阻变效应的研究  主持


3) 上海市科委项目 2013年-2015年

   铁电阻变存储效应的研究  主持


2）上海市科委创新

   铁电人工突触固态器件 参与


1）上海市科委创新

   基于铁电效应的存算一体化和神经形态计算 参与


学术成果


41Xu, D. D.; Ma, R. R.; Zhao, Y. F.; Guan, Z.; Zhong, Q. L.; Huang, R.; Xiang, P. H.; Zhong, N.; Duan, C. G., Unconventional out-of-plane domain inversion via in-plane ionic migration in a van der Waals ferroelectric. Journal of Materials Chemistry C 2020, 8 (21), 6966-6971.

全文链接：https://doi.org/10.1039/d0tc01620a

  

40 Xu, D. D.; Ma, R. R.; Zhang, Y. S.; Deng, X.; Zhang, Y. Y.; Zhu, Q. X.; Zhong, N.; Tang, X. D.; Xiang, P. H.; Duan, C. G., Electrostatic-doping-controlled phase separation in electron-doped manganites. Applied Physics Letters 2020, 117 (13), 132405. (Featured Article)

全文链接：https://doi.org/10.1063/5.0024431

  

39 Ma, R. R.; Xu, D. D.; Guan, Z.; Deng, X.; Yue, F. Y.; Huang, R.; Chen, Y.; Zhong, N.; Xiang, P. H.; Duan, C. G., High-speed ultraviolet photodetectors based on 2D layered CuInP2S6 nanoflakes. Applied Physics Letters 2020, 117 (13), 131102.

全文链接：https://doi.org/10.1063/5.0022097

  

38 Liu, Y.-D.; Hu, C.-Z.; Wang, J.-J.; Zhong, N.; Xiang, P.-H.; Duan, C.-G., Reversible transition of filamentary and ferroelectric resistive switching in BaTiO3/SmNiO3 heterostructures. Journal of Materials Chemistry C 2020, 8 (17), 5815-5820.

全文链接：https://doi.org/10.1039/d0tc00676a

  

37 Yang, N.; Hu, C. Z.; Ren, Z. Q.; Bao, S. Y.; Tian, B. B.; Yue, F. Y.; Xiang, P. H.; Zhong, N.; Duan, C. G.; Chu, J. H., Nonvolatile Negative Optoelectronic Memory Based on Ferroelectric Thin Films. Acs Applied Electronic Materials 2020, 2, 1035-1040.

全文链接：https://dx.doi.org/10.1021/acsaelm.0c00066


36 Guan, Z.; Hu, H.; Shen, X.; Xiang, P.; Zhong, N.*; Chu, J.; Duan, C., Recent Progress in Two-Dimensional Ferroelectric Materials. Advanced Electronic Materials 2020, 6, 1900818.

全文链接：https://doi.org/10.1002/aelm.201900818


35 Deng, X.; Zhao, Y. F.; Zhong, N.; Yue, F. Y.; Huang, R.; Peng, H.; Tang, X. D.; Xiang, P. H.*; Chu, Y. H.; Duan, C. G., Proton mediated Phase Control in Flexible and Transparent Mott Transistors. Advanced Electronic Materials 2020, 6, 1900742.

全文链接：https://doi.org/10.1002/aelm.201900742


34 Bao, S.-Y.; Deng, X.; Mao, F.; Zhong, N.; Yue, F.-Y.; Sun, L.; Xiang, P.-H.*; Duan, C.-G., Ultra-flat ITO films on mica for high temperature transparent flexible electrodes. Ceramics International 2020, 46 (2), 2268-2272.

全文链接：https://doi.org/10.1016/j.ceramint.2019.09.215


33 Yang, N.; Yuan, Y.; Guan, Z.; Zhong, N.; Chen, W. X.; Qi, R. J.; Zhang, Y. Y.; Huang, R.; Tang, X. D.; Xiang, P. H.*; Duan, C. G.; Chu, J. H., Structure dependence of ferroelectricity in high quality BiMnO3 epitaxial films. Physical Review Materials 2019, 3 (5), 054402.

全文链接：https://doi.org/10.1103/PhysRevMaterials.3.054402


32 Yang, N.; Ren, Z.-Q.; Hu, C.-Z.; Guan, Z.; Tian, B.; Zhong, N.*; Xiang, P.-H.; Duan, C.-G.; Chu, J., Ultra-wide temperature electronic synapses based on self-rectifying ferroelectric memristors. Nanotechnology 2019, 30, 464001.

全文链接：https://doi.org/10.1088/1361-6528/ab3c3d


31 Xu, D. D.; Deng, X.; Zhao, Y. F.; Ma, R. R.; Zhong, N.*; Huang, R.; Peng, H.; Xiang, P. H.*; Duan, C. G., Hydrogenation Dynamics of Electrically Controlled Metal-Insulator Transition in Proton gated Transparent and Flexible WO3 Transistors. Advanced Functional Materials 2019, 29, 1902497. 

全文链接：https://doi.org/10.1002/adfm.201902497


30 Tian, B. B.; Liu, L.; Yan, M. G.; Wang, J. L.; Zhao, Q. B.; Zhong, N.; Xiang, P. H.; Sun, L.; Peng, H.; Shen, H.; Lin, T.; Dkhi, B.; Meng, X. J.; Chu, J. H.; Tang, X. D.; Duan, C. G., A Robust Artificial Synapse Based on Organic Ferroelectric Polymer. Advanced Electronical Materials 2019, 5 (1), 1800600.


29 Ren, Z.-Q.; Liu, Y.-D.; Bao, S.-Y.; Yang, N.; Zhong, N.*; Tang, X.-D.; Xiang, P.-H.; Duan, C.-G., Probing the origins of electroresistance switching behavior in ferroelectric thin films. Applied Physics Letters 2019, 115 (24), 242901.

全文链接：https://doi.org/10.1063/1.5119970


28 Liu, H.; Wang, C.; Han, G.; Li, J.; Peng, Y.; Liu, Y.; Wang, X.; Zhong, N.; Duan, C.; Wang, X., ZrO 2 Ferroelectric FET for Non-volatile Memory Application. IEEE Electron Device Letters 2019, 40 (9), 1419-1422.


27 Li, B.; Ren, Z.; Zhong, N.; Xie, W., Highly linear polarized photoluminescence from a rippled WSe 2 monolayer. Optics express 2019, 27 (9), 12436-12442.


26 Jiang, C.; Zhang, Y.; Tian, B.; Luo, C.; Zhong, N.; Wang, J.; Meng, X.; Peng, H.; Duan, C.-G.; Chu, J., Efficient two-terminal artificial synapse based on a network of functionalized conducting polymer nanowires. Journal of Materials Chemistry C 2019, 7 (32), 9933-9938.


25 Jia, M. X.; Ren, Z. Q.; Liu, Y. D.; Cheng, Y.; Huang, R.; Xiang, P. H.; Tang, X. D.; Tian, B. B.; Zhong, N.*; Duan, C. G., Ferroelectric polarization-controlled resistive switching in BaTiO3/SmNiO3 epitaxial heterostructures. Applied Physics Letters 2019, 114 (10), 102901.

全文链接：https://doi.org/10.1063/1.5066032


24 Guan, Z.; Yang, N.; Ren, Z. Q.; Zhong, N.*; Huang, R.; Chen, W. X.; Tian, B. B.; Tang, X. D.; Xiang, P. H.*; Duan, C. G.; Chu, J. H., Mediation in the second-order synaptic emulator with conductive atomic force microscopy. Nanoscale 2019, 11 (18), 8744-8751. 

全文链接：https://doi.org/10.1039/c8nr09662g


23 Xiang, P.-H.; Zhong, N.#; Sun, L.; Tang, X.; Duan, C.-G., Tailoring colossal magnetoresistance and magnetoresistive memory effect by two-dimension-like phase competition in electron-doped manganite superlattices. Journal of Physics D: Applied Physics 2018, 51, 275304.

全文链接：https://doi.org/10.1088/1361-6463/aac86c


22 Shen, P.; Guan, Z.; Zhong, N.; Xiang, P. H.; Wang, R. B.; Bao, Q. Y.; Yang, P. X.; Sun, L.; Duan, C. G.; Chu, J. H., Leakage mechanisms of double-perovskite Bi2FeMnO6 epitaxial thin films. Journal of Physics D-Applied Physics 2018, 51 (4), 045304.


21 Huang, X.; Jiang, K. A.; Niu, Y. R.; Wang, R. Z.; Zheng, D. Y.; Dong, A. H.; Dong, X. Y.; Mei, C. L.; Lu, J.; Liu, S.; Gan, Z. K.; Zhong, N.; Wang, H., Configurable ultra-low operating voltage resistive switching between bipolar and threshold behaviors for Ag/TaOx/Pt structures. Applied Physics Letters 2018, 113 (11), 112103.


20 Wang, Y. Q.; Song, Y. X.; Tong, W. Y.; Zhang, Y. Y.; Qi, R. J.; Xiang, P. H.; Huang, R.; Zhong, N.; Lin, H. C.; Tang, X. D.; Peng, H.; Duan, C. G., Electric field control of magnetism in nickel with coaxial cylinder structure at room temperature by electric double layergating. Journal of Materials Chemistry C 2017, 5 (40), 10609-10614.


19 Wang, Y. Q.; Fang, M. J.; Tian, B. B.; Xiang, P. H.; Zhong, N.; Lin, H. C.; Luo, C. H.; Peng, H.; Duan, C. G., Transparent PVDF-TrFE/Graphene Oxide Ultrathin Films with Enhanced Energy Harvesting Performance. Chemistryselect 2017, 2 (26), 7951-7955. 


18 Wang, J. W.; Luo, Q. Q.; Luo, C. H.; Lin, H. C.; Qi, R. J.; Zhong, N.; Peng, H., High-performance supercapacitor electrode based on a nanocomposite of polyaniline and chemically exfoliated MoS2 nanosheets. Journal of Solid State Electrochemistry 2017, 21 (7), 2071-2077.


17 Jiang, Z.-Z.; Guan, Z.; Yang, N.; Xiang, P.-H.*; Qi, R.-J.; Huang, R.; Yang, P.-X.; Zhong, N.*; Duan, C.-G., Epitaxial growth of BiFeO3 films on SrRuO3/SrTiO3. Materials Characterization 2017, 131, 217-223.

全文链接：http://dx.doi.org/10.1016/j.matchar.2017.07.009


16 Jiang, C. L.; Zhong, N.; Luo, C. H.; Lin, H. C.; Zhang, Y. Y.; Peng, H.; Duan, C. G., (Diisopropylammonium)(2)MnBr4: a multifunctional ferroelectric with efficient green-emission and excellent gas sensing properties. Chemical Communications 2017, 53 (44), 5954-5957.


15 Guan, Z.; Jiang, Z.-Z.; Tian, B.-B.; Zhu, Y.-P.; Xiang, P.-H.*; Zhong, N.*; Duan, C.-G.; Chu, J.-H., Identifying intrinsic ferroelectricity of thin film with piezoresponse force microscopy. AIP Advances 2017, 7 (9), 095116.

全文链接：http://dx.doi.org/10.1063/1.4999199


14 Chen, B.-J.; Yang, N.; Zhong*, N.; Tang, X.-D.; Yang, P.-X.; Xiang*, P.-H.; Duan, C.-G., Selective growth of Ruddlesden-Popper strontium iridate epitaxial films by controlling oxygen partial pressure in pulsed laser deposition. Materials Letters 2017, 202, 96–98.

全文链接：http://dx.doi.org/10.1016/j.matlet.2017.05.063


13 Chen, B. J.; Sun, Y.; Yang, N.; Zhong, N.*; Zhang, Y. Y.; Bai, W.; Sun, L.; Tang, X. D.; Yang, P. X.; Xiang, P. H.*; Duan, C. G., Electronic phase diagram of oxygen-deficient SmNiO3-d epitaxial thin films. Journal of Physics D-Applied Physics 2017, 50 (23), 235302.

全文链接：https://doi.org/10.1088/1361-6463/aa6de7


12 Zhang, Y.; Dong, W.; Qi, R.; Huang, R.; Yang, J.; Bai, W.; Zhong, N.; Chen, Y.; Wang, G.; Dong, X.; Technology, Large room-temperature magnetoresistance in epitaxial La 0.7 Ca 0.25 Sr 0.05 MnO 3 thin films prepared by sol-gel method. Journal of Sol-Gel Science Technology2017, 78(3), 576.


11 Sun, Y.; Zhong, N.*; Zhang, Y. Y.; Qi, R. J.; Huang, R.; Tang, X. D.; Yang, P. X.; Xiang, P. H.; Duan, C. G., Structure and electrical properties of epitaxial SrRuO3 thin films controlled by oxygen partial pressure. Journal of Applied Physics 2016, 120 (23), 235108.

全文链接：https://aip.scitation.org/doi/10.1063/1.4972477


10 Zhong, N.#; Xiang, P. H.; Zhang, Y. Y.; Wu, X.; Tang, X. D.; Yang, P. X.; Duan, C. G.; Chu, J. H., Polarization fluctuation behavior of lanthanum substituted Bi4Ti3O12 thin films. Journal of Applied Physics 2015, 118 (10), 104102.

全文链接：http://dx.doi.org/10.1063/1.4930041


9 Xiang, P. H.*; Zhong, N.#; Duan, C. G.; Tang, X. D.; Hu, Z. G.; Yang, P. X.; Zhu, Z. Q.; Chu, J. H., Strain controlled metal-insulator transition in epitaxial NdNiO3 thin films. Journal of Applied Physics 2013, 114 (24), 243713.

全文链接：http://dx.doi.org/10.1063/1.4858455


8 Zhong, N.; Cao, J. J.; Shima, H.; Akinaga, H., Effect of Annealing Temperature on TiO2-Based Thin-Film-Transistor Performance. IEEE Electron Device Letters 2012, 33 (7), 1009-1011.

全文链接：https://ieeexplore.ieee.org/abstract/document/6199956


7 Zhong, N.; Shima, H.; Akinaga, H., Improvement of Rectifying Property in Pt/TiOx/Pt by Controlling Oxidization of TiOx Layer. Japanese Journal of Applied Physics 2011, 50 (4), 04DH04.


6 Zhong, N.; Shima, H.; Akinaga, H., Mechanism of the performance improvement of TiO2-x-based field-effect transistor using SiO2 as gate insulator (vol 1, 032167, 2011). AIP Advances 2011, 1 (4), 032167.


5 Zhong, N.; Shima, H.; Akinaga, H. J. A. P. L., Rectifying characteristic of Pt/TiO x/metal/Pt controlled by electronegativity. Applied Physics Letters 2010, 96 (4), 042107.


4 Zhong, N.; Shima, H.; Akinaga, H., Transient Current Study on Pt/TiO2-x/Pt Capacitor. Japanese Journal of Applied Physics 2010, 49 (4), 04DJ15.


3 Zhong, N.; Shima, H.; Akinaga, H., Switchable Pt/TiO2-x/Pt Schottky Diodes. Japanese Journal of Applied Physics 2009, 48 (5), 05DF03.


2 Zhong, N.; Shiosaki, T., Dielectric behavior of Bi3.25La0.75Ti3O12 ferroelectric film. Journal of Applied Physics 2006, 100 (3), 034107.


1 Zhong, N.; Okamura, S.; Uchiyama, K.; Shiosaki, T., Single-ionized-oxygen-vacancy-related dielectric relaxation in Bi3.25La0.75Ti3O12 ferroelectric films.


荣誉及奖励


2006 年国家优秀自费留学生奖学金

日本文部科学省博士研究生奖学金

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